The Catalan Institute of Nanoscience and Nanotechnology (ICN2) has awarded IDP the preliminary design of its new micro and nanotechnology development plant, Innofab. This infrastructure will be located in Cerdanyola del Vallés next to the Alba Synchrotron, the most important third-generation scientific infrastructure in the Mediterranean.

INNOFAB will be a unique infrastructure in Spain and will become a European benchmark in the manufacture of advanced semiconductors. It will have a built-up area of 11,000 m2, and will include two large independent areas: a production area of around 7,000 m2, including a 2,000 m2 clean room dedicated to the development of innovative micro/nanotechnologies based on advanced semiconductors (‘beyond-CMOS’), and a laboratory and office area of around 4,000 m2.

IDP will be responsible for the development of the preliminary project using the BIM (Building Information Modeling) methodology, which will ensure efficient management and compliance with the highest standards in terms of quality, deadlines and costs.

The Catalan Institute of Nanoscience and Nanotechnology (ICN2) is an international non-profit research institute located in Cerdanyola del Vallés. It is dedicated to the generation of knowledge, materials and devices in three main fields: ICT, health and environment. Its research focuses on the nanoscale, exploring new properties and applications for everyday life.

This facility will be the first semiconductor development infrastructure of its kind in Spain. It will provide services to startups, companies without their own factories and research centres, boosting the attraction of innovative companies to Barcelona, which currently have to prefabricate their chips in other countries.